Electrolytically coated optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

ABSTRACT

The invention relates to an optoelectronic seminconductor component, comprising a substrate-free optoelectronic semiconductor chip ( 1 ), which has a first main surface ( 1   a ) on an upper face and a second main surface ( 1   b ) on a lower face, and a metal carrier ( 2 ), which is arranged on the lower face of the optoelectronic seminconductor chip ( 1 ), wherein the metal carrier ( 2 ) protrudes over the optoelectronic semiconductor chip ( 1 ) in at least one lateral direction ( 1 ) and the metal carrier ( 2 ) is deposited on the second main surface ( 1   b ) of the optoelectronic semiconductor chip ( 1 ) using a galvanic or electroless plating method.

This patent application claims the priority of German patent applicationDE 10 2010 045 390.0, the disclosure content of which is herebyincorporated by reference.

An optoelectronic semiconductor component is specified. Furthermore, amethod for producing an optoelectronic semiconductor component isspecified.

The documents DE 102005053274, WO 2006/032252 and WO 2009/079978describe optoelectronic semiconductor components.

One object to be achieved is to specify an optoelectronic semiconductorcomponent which has improved thermal properties.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the optoelectronic semiconductor componentcomprises at least one substrateless optoelectronic semiconductor chip.The optoelectronic semiconductor chip can be a radiation-emittingsemiconductor chip, in particular a luminescence diode. Theoptoelectronic semiconductor chip is then formed by a laser diode or bya light-emitting diode. Preferably, the optoelectronic semiconductorchip is designed for generating electromagnetic radiation in thewavelength range between UV radiation and infrared radiation, inparticular visible light. Furthermore, it is possible for theoptoelectronic semiconductor chip to be a radiation-detectingsemiconductor chip, that is to say for example a photodiode.

In the present case, the optoelectronic semiconductor chip is embodiedin a substrateless fashion. That is to say that a growth substrate ontowhich the semiconductor layers of the optoelectronic semiconductor chipare grown epitaxially is removed from the epitaxially grown layers. Theoptoelectronic semiconductor chip therefore consists of its epitaxiallygrown semiconductor layers and, if appropriate, of metallizationsapplied to an outer surface of the semiconductor body formed by theepitaxially grown semiconductor layers. In this case, the substratelessoptoelectronic semiconductor chip is distinguished, inter alia, by itssmall thickness. Preferably, the substrateless optoelectronicsemiconductor chip has a thickness of less than 10 μm, preferably lessthan 7 μm, for example approximately 6 μm.

The substrateless optoelectronic semiconductor chip has a first mainface at its top side and a second main face at its underside. The twomain faces can be connected to one another by at least one side face. Byway of example, electromagnetic radiation generated during operationemerges from the substrateless optoelectronic semiconductor chip for themost part through the first main face. The second main face can thenserve as a mounting face, by which the optoelectronic semiconductor chipis mounted on a carrier. In this case, it is possible for the connectionlocations for making the electrical contact with the optoelectronicsemiconductor chip to be arranged at the second main face. Theoptoelectronic semiconductor chip can be surface-mountable in this case.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the optoelectronic semiconductor componentcomprises a metallic carrier which is arranged at the underside of theoptoelectronic semiconductor chip. The metallic carrier is formed with amaterial having metallic properties. By way of example, the metalliccarrier consists of a metal or a metal alloy. The metallic carrier isarranged at the underside of the optoelectronic semiconductor chip andis preferably mechanically fixed there to the optoelectronicsemiconductor chip.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the metallic carrier is depositedelectrolytically or in an electroless fashion at the second main face ofthe optoelectronic semiconductor chip. That is to say that the metalliccarrier is produced by electrolytic or electroless deposition.Production by electrolytic or electroless deposition is a substantivefeature which, on the finished optoelectronic semiconductor component,is clearly distinguishable from other production methods. In particular,on account of the absence of a connecting means such as, for instance, asolder metallization between metallic carrier and optoelectronicsemiconductor chip, it can be clearly demonstrated that the metalliccarrier has been deposited at the second main face of the optoelectronicsemiconductor chip rather than being fixed to the optoelectronicsemiconductor chip for instance in some other way.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the metallic carrier projects beyond theoptoelectronic semiconductor chip in at least one lateral direction. Inthis case, the lateral directions are, for example, those directionswhich run parallel to the second main face of the optoelectronicsemiconductor chip. Therefore, in the present case, the metallic carrierdoes not terminate flush with the optoelectronic semiconductor chip in alateral direction, but rather projects beyond said chip at at least oneside face. Preferably, the metallic carrier completely projects beyondthe optoelectronic semiconductor chip. That is to say that the metalliccarrier then projects beyond the optoelectronic semiconductor chip inall lateral directions, that is to say at all side faces of theoptoelectronic semiconductor chip. Overall, the metallic carrier therebyhas a larger basic area than the optoelectronic semiconductor chip.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the semiconductor component comprises asubstrateless optoelectronic semiconductor chip having a first main faceat a top side and a second main face at an underside. Furthermore, theoptoelectronic semiconductor component comprises a metallic carrier,which is arranged at the underside of the optoelectronic semiconductorchip, wherein the metallic carrier projects beyond the optoelectronicsemiconductor chip in at least one lateral direction, and the metalliccarrier is deposited electrolytically or in an electroless fashion atthe second main face of the optoelectronic semiconductor chip.

In the case of metallic carriers deposited electrolytically or in anelectroless fashion, the deposition of the metallic carriers onto theoptoelectronic semiconductor chips has hitherto taken place in the waferassemblage for reasons of efficiency. Owing to this, the carrierterminates flush with the optoelectronic semiconductor chip in a lateraldirection. The optoelectronic semiconductor component described in thepresent case allows this geometry dependence between optoelectronicsemiconductor chip and metallic carrier to be broken up. The metalliccarrier can have different geometrical dimensions and forms than theoptoelectronic semiconductor chip. This allows a scaleable metalliccarrier distinguished, for example, by an improved thermal couplingduring the use of the optoelectronic semiconductor component. In otherwords, the metallic carrier on which the optoelectronic semiconductorchip is situated can be designed in a geometrically variable manner. Themetallic carrier, that is to say the base of the optoelectronicsemiconductor chip, can be expanded in a lateral direction. By way ofexample, an improved thermal coupling of the optoelectronicsemiconductor component can be achieved as a result.

Furthermore, a method for producing an optoelectronic semiconductorcomponent is specified. In accordance with at least one embodiment ofthe method, firstly a multiplicity of optoelectronic semiconductor chipsis provided, wherein each of the optoelectronic semiconductor chips hasa first main face at a top side and a second main face at an underside.The optoelectronic semiconductor chips involve substratelessoptoelectronic semiconductor chips. That is to say that the growthsubstrate of the optoelectronic semiconductor chips is removed beforethe providing process and, as early as before the process of providingthe multiplicity of substrateless optoelectronic semiconductor chips,for example a semiconductor wafer is singulated into the multiplicity ofsubstrateless optoelectronic semiconductor chips.

In accordance with at least one embodiment of the method, a next methodstep involves arranging and mechanically fixing the multiplicity ofoptoelectronic semiconductor chips on an intermediate carrier. For thispurpose, the intermediate carrier can consist for example of a ceramicmaterial or glass. The fixing can be effected by means of a releasableadhesive-bonding connection, for example. The optoelectronicsemiconductor chips can be arranged on the intermediate carrier atarbitrary distances with respect to one another. Preferably, theoptoelectronic semiconductor chips are arranged in a manner spaced apartfrom one another, such that a respective interspace is formed betweentwo mutually directly adjacent optoelectronic semiconductor chips.Later, in the finished optoelectronic semiconductor component, the sizeof said interspace determines the lateral extent of the carrier and thushow far the carrier projects beyond the optoelectronic semiconductorchip in a lateral direction. In the case of optoelectronic semiconductorchips which are subjected to particularly high thermal loading, forexample, the interspace can be chosen to be particularly large, thusresulting in a metallic carrier that projects beyond the optoelectronicsemiconductor chip particularly far in a lateral direction.

In accordance with at least one embodiment of the method, a next methodstep involves filling the interspaces with an electrically insulatinglayer. In this case, the filling takes place for example in such a waythat the electrically insulating layer terminates flush with that sideof the optoelectronic semiconductor chips which faces away from theintermediate carrier, that is to say the second main face of theoptoelectronic semiconductor chip at its underside. The electricallyinsulating layer can be formed for example with a silicone, an epoxyresin or a combination of these materials. Furthermore, it is possiblefor the electrically insulating layer to contain PCB or a spin-on glassor to consist of one of these materials.

In accordance with at least one embodiment of the method, a next methodstep involves applying a seed layer to that side of the optoelectronicsemiconductor chips and of the electrically insulating layer which facesaway from the intermediate carrier. The seed layer is formed with ametallic material, for example, and can be applied by vapor depositionor sputtering. The seed layer forms an intimate connection with theoptoelectronic semiconductor chips and the electrically insulatinglayer. A metallic carrier is subsequently deposited onto the seed layerelectrolytically or in an electroless fashion.

In accordance with at least one embodiment of the method for producingan optoelectronic semiconductor component, the method comprises thefollowing steps:

-   -   providing a multiplicity of optoelectronic semiconductor chips,        wherein each of the optoelectronic semiconductor chips has a        first main face at a top side and a second main face at an        underside,    -   arranging and fixing the multiplicity of optoelectronic        semiconductor chips on an intermediate carrier, wherein the        optoelectronic semiconductor chips are arranged in a manner        spaced apart from one another, such that a respective interspace        is formed between two mutually directly adjacent optoelectronic        semiconductor chips,    -   filling the interspaces with an electrically insulating layer,    -   applying a seed layer to that side of the optoelectronic        semiconductor chips and of the electrically insulating layer        which faces away from the intermediate carrier, and    -   depositing a metallic carrier onto the seed layer        electrolytically or in an electroless fashion.

An optoelectronic semiconductor component described here can preferablybe produced by means of the method described here. That is to say thatall features disclosed for the method are also disclosed for theoptoelectronic semiconductor component, and vice versa. The followingembodiments relate both to the optoelectronic semiconductor componentand to the method described here.

In accordance with at least one embodiment, the metallic carrierprojects beyond the optoelectronic semiconductor chip in at least onelateral direction by at least 100 μm, preferably by at least 250 μm. Inthis case, it is possible for the metallic carrier to project beyond theoptoelectronic semiconductor chip in all lateral directions by at least100 μm, preferably by at least 250 μm.

In accordance with at least one embodiment, the metallic carrierprojects beyond the optoelectronic semiconductor chip in at least onelateral direction by at least 10%, preferably by at least 25%, of themaximum edge length of the optoelectronic semiconductor chip. In thiscase, the maximum edge length of the optoelectronic semiconductor chipis the length of the longer of the two edges in the case of arectangular optoelectronic semiconductor chip. In the case of a roundoptoelectronic semiconductor chip, the maximum edge length is thediameter of the optoelectronic semiconductor chip.

In accordance with at least one embodiment, a seed layer is arrangedbetween the metallic carrier and the second main face of theoptoelectronic semiconductor chip, said seed layer at least in placesbeing in direct contact with the metallic carrier and the second mainface of the optoelectronic semiconductor chip. In this case, the seedlayer can consist of the same material as or of a different materialthan the metallic carrier. By way of example, the seed layer is appliedby means of sputtering or vapor deposition. The seed layer imparts amechanically fixed connection between optoelectronic semiconductor chipand metallic carrier, which can be released only by destroying theoptoelectronic semiconductor component.

In accordance with at least one embodiment of the optoelectronicsemiconductor component, the seed layer is designed to reflectelectromagnetic radiation that is to be emitted or detected by theoptoelectronic semiconductor chip. Preferably, the seed layer for thispurpose then has a reflectivity of at least 50%, for example of at least75%, for said electromagnetic radiation. The seed layer can containsilver, for example.

In accordance with at least one embodiment, the metallic carrier iselectrically conductive and forms at least one electrical connectionlocation of the optoelectronic semiconductor component. That is to saythat the metallic carrier is electrically conductively connected to atleast one contact location of the optoelectronic semiconductor chip, forexample that side of the metallic carrier which faces away from theoptoelectronic semiconductor chip then forms at least one electricalconnection location of the optoelectronic semiconductor component viawhich contact can be made with the latter. In this embodiment, the seedlayer is also embodied in an electrically conductive fashion, such thatan electric current impressed via the metallic carrier passes throughthe seed layer into the optoelectronic semiconductor chip.

In accordance with at least one embodiment, the metallic carriercomprises partial regions electrically insulated from one other, whereineach of the partial regions forms an electrical connection location ofthe optoelectronic semiconductor component, and the electricalconnection locations are of opposite polarity. That is to say that themetallic carrier is divided into at least two partial regions that formconnection locations for making n- and p-side contact with theoptoelectronic semiconductor chip.

In this way, it is possible for the optoelectronic semiconductorcomponent to be surface-mountable, wherein the connection locations areformed at that side of the metallic carrier which faces away from theoptoelectronic semiconductor chip.

In accordance with at least one embodiment, the metallic carriercontains or consists of one of the following materials: nickel, copper,gold, palladium. In this case, it is possible for the metallic carrierto have regions, for example layers, of other materials. Thus, themetallic carrier can have, from its side facing the optoelectronicsemiconductor chip to its side facing away from the optoelectronicsemiconductor chip, the following layer construction, for example: alayer composed of nickel, a layer composed of palladium, a layercomposed of gold.

In accordance with at least one embodiment, the optoelectronicsemiconductor component comprises a multiplicity of substratelessoptoelectronic semiconductor chips, wherein the metallic carriercompletely projects beyond all the optoelectronic semiconductor chips ina lateral direction. The optoelectronic semiconductor chips can then inparticular also be optoelectronic semiconductor chips which emit lightof different colors. By way of example, the optoelectronic semiconductorcomponent then comprises at least one red light, one green light and oneblue light emitting optoelectronic semiconductor chip. Theoptoelectronic semiconductor chips of the optoelectronic semiconductorcomponent can be electrically isolated from one another, such that theyare operable independently of one another.

In accordance with at least one embodiment, the optoelectronicsemiconductor component comprises exactly one single substratelessoptoelectronic semiconductor chip.

In accordance with at least one embodiment, the optoelectronicsemiconductor component comprises an electrically insulating layer,which covers the metallic carrier at its outer surface facing theoptoelectronic semiconductor chip and outer surface free of theoptoelectronic semiconductor chip, wherein the electrically insulatinglayer covers a side face of the optoelectronic semiconductor chip atleast in places. In other words, the top side of the metallic carrierfacing the optoelectronic semiconductor chip is covered with theoptoelectronic semiconductor chip and the electrically insulating layer.In this case the electrically insulating layer can terminate for exampleflush with the first main face of the optoelectronic semiconductor chipfacing away from the carrier. The optoelectronic semiconductor chip canbe covered by the electrically insulating layer completely at its sidefaces. The main face of the carrier facing the optoelectronicsemiconductor chip at the top side of the carrier is therefore coveredcompletely by the electrically insulating layer and the optoelectronicsemiconductor chip.

In accordance with at least one embodiment, the electrically insulatinglayer is designed to reflect electromagnetic radiation that is to beemitted or detected by the optoelectronic semiconductor chip duringoperation. For this purpose, the electrically insulating layer cancomprise, for example, particles of a filler. Reflective means that theelectrically insulating layer has a reflectivity of in particular morethan 80% or of more than 90%, preferably of more than 94%, for radiationin the visible spectral range. The electrically insulating layerpreferably reflects diffusely. For an observer, the electricallyinsulating layer preferably appears white. The reflective particles areproduced for example from a metal oxide such as aluminum oxide ortitanium oxide, from a metal fluoride such as calcium fluoride or from asilicon oxide or consist thereof. An average diameter of the particles,for example a median diameter d₅₀ in Q₀, is preferably between 0.3 μmand 5 μm inclusive. A proportion by weight of the particles in theentire reflective layer is preferably between 5% and 50% inclusive, inparticular between 10% and 30% inclusive. The particles have areflective effect on account of their preferably white color and/or onaccount of their difference in refractive index with respect to thematrix material.

In accordance with at least one embodiment, only the first main face ofthe optoelectronic semiconductor chip is freely accessible. That is tosay that, apart from the first main face, the optoelectronicsemiconductor chip is completely covered. In this case, theoptoelectronic semiconductor chip can be covered for example by the seedlayer, the metallic carrier and/or the electrically insulating layer. Inthis way it can be ensured, for example, that the optoelectronicsemiconductor chip, if it is a radiation-emitting semiconductor chip,emits the electromagnetic radiation generated during operationexclusively through the first main face.

In accordance with at least one embodiment, prior to the electrolytic orelectroless deposition, electrically insulating separating structuresare produced on the seed layer and cover the seed layer in places. Theseseparating structures serve for forming partial regions of the metalliccarrier which are electrically insulated from one another and whichform, in the completed optoelectronic semiconductor component,connection locations of the optoelectronic semiconductor component,which can be of opposite polarities.

The optoelectronic semiconductor component described here and the methoddescribed here for producing an optoelectronic semiconductor componentare explained in greater detail below on the basis of exemplaryembodiments and the associated figures.

FIGS. 1A and 1B show, on the basis of schematic perspectiveillustrations, two exemplary embodiments of optoelectronic semiconductorcomponents described here.

With reference to FIGS. 2A, 2B, 2C, 2D, 2E, 3A, 3B, 3C, 3D, 3E, 3F, 3G,exemplary embodiments of methods described here are explained in greaterdetail.

With reference to the schematic illustrations in FIGS. 4A and 4B, afurther exemplary embodiment of an optoelectronic semiconductorcomponent described here is explained in greater detail.

Elements which are identical, of identical type of act identically areprovided with the same reference signs in the figures. The figures andthe size relationships of the elements illustrated in the figures amongone another should not be regarded as to scale. Rather, individualelements may be illustrated with an exaggerated size in order to enablebetter illustration and/or in order to afford a better understanding.

In conjunction with the perspective schematic illustration in FIG. 1A, afirst exemplary embodiment of an optoelectronic semiconductor componentdescribed here is explained in greater detail. The optoelectronicsemiconductor component comprises a substrateless optoelectronicsemiconductor chip 1. The substrateless optoelectronic semiconductorchip 1 is free of a growth substrate. The optoelectronic semiconductorchip is for example a luminescence diode chip, for example alight-emitting diode, or a radiation-detecting chip such as photodiode,for instance.

The optoelectronic semiconductor chip has a first main face 1 a at itstop side. The optoelectronic semiconductor chip 1 has a second main face1 b at its underside. By way of example, the optoelectronicsemiconductor chip is embodied in a parallelepipedal fashion, such thatthe first main face 1 a and the second main face 1 b have the same formand size.

The optoelectronic semiconductor component furthermore comprises ametallic carrier 2. The metallic carrier is produced by electrolytic orelectroless deposition. A seed layer 21 is arranged between the metalliccarrier 2 and the second main face 1 b of the optoelectronicsemiconductor chip 1, said seed layer imparting a mechanically fixedconnection between the metallic carrier 2 and the optoelectronicsemiconductor chip 1. The carrier 2 projects beyond the optoelectronicsemiconductor chip 1 completely at the side faces 1 c thereof in alllateral directions 1. By way of example, the basic area of the carrier 2is at least double the magnitude of the area content of the second mainface 1 b and/or of the first main face 1 a of the optoelectronicsemiconductor chip.

In the present case, the carrier 2 is embodied in an electricallyconductive fashion. The seed layer 21 is also embodied in anelectrically conductive fashion. The carrier 2 therefore forms anelectrical connection location of the optoelectronic semiconductorcomponent and for this purpose is electrically conductively connected tothe optoelectronic semiconductor chip 1 at the underside 1 b.

In conjunction with the schematic perspective illustration in FIG. 1B, afurther exemplary embodiment of an optoelectronic semiconductorcomponent described here is explained in greater detail. In thisexemplary embodiment, the carrier 2 has two partial regions 2 a, 2 b,which are electrically insulated from one another by an electricallyinsulating material 3. The electrically insulating material can beformed for example with silicone, epoxy resin, a ceramic material or avitreous material. The partial regions 2 a, 2 b form connectionlocations of opposite polarities of the optoelectronic semiconductorchip 1. By way of example, for this purpose they are electricallyconductively connected to different regions of the optoelectronicsemiconductor chip 1 at the underside 1 b of the optoelectronicsemiconductor chip 1.

In the present case, the optoelectronic semiconductor component istherefore surface-mountable, that is to say that it can be mechanicallyfixed and electrically contact-connected by an adhesive-bonding orsoldering connection at the underside of the carrier 2 facing away fromthe semiconductor chip 1.

As a further difference with respect to the optoelectronic semiconductorcomponent in accordance with FIG. 1A, the optoelectronic semiconductorcomponent in the exemplary embodiment in FIG. 1B comprises anelectrically insulating layer 4, which covers the optoelectronicsemiconductor chip 1 at the side faces 1 c thereof and can terminateflush with the first main face 1 a, such that the optoelectronicsemiconductor chip 1 and the electrically insulating layer 4 do notmutually project beyond one another. By way of example, it is possiblefor the electrically insulating layer 4 to be embodied in aradiation-reflecting fashion and for this purpose to be provided withparticles of a filler.

Furthermore, it is possible for the electrically insulating layer 4 andthe electrically insulating material 3 to be formed with the samematerial. In this case, the electrically insulating layer 4 can coverthe seed layer 21, for example. In the region of the electricallyinsulating material 3, however, the seed layer 21 is removed, such thatthe electrically insulating layer 4 and the electrically insulatingmaterial 3 are in direct contact with one another.

In conjunction with FIGS. 2A to 2E, a first exemplary embodiment of amethod described here for producing an optoelectronic semiconductorcomponent is explained in greater detail. In a first method step,substrateless optoelectronic semiconductor chips 1 are applied by theirfirst main faces 1 a to an intermediate carrier 5, which can be formedwith glass, for example. The mechanical adhesion between intermediatecarrier 5 and optoelectronic semiconductor chips 1 is imparted by aconnection means layer 6, which is an adhesive-bonding connection, forexample. Interspaces 7 are formed between the optoelectronicsemiconductor chips 1.

The interspaces 7 are subsequently provided with the electricallyinsulating layer 4, which can be formed for example with PCB or spin-onglass.

In a next method step, the seed layer 21 is applied to the top side ofthe assemblage facing away from the intermediate carrier 5. The seedlayer 21 is followed by the metallic carrier assemblage 20, which isdeposited onto the seed layer 21 for example electrolytically or in anelectroless fashion (cf. FIG. 2B).

In a further method step (FIG. 2C), the intermediate carrier 5 isremoved again. At the side facing away from the carrier assemblage 20,the first main faces 1 a of the optoelectronic semiconductor chips 1 areexposed.

A further method step 2 d involves carrying out singulation to formindividual optoelectronic semiconductor components each comprising ametallic carrier 2 and at least one optoelectronic semiconductor chip 1,cf. FIG. 2D.

As illustrated in conjunction with FIG. 2E, the optoelectronicsemiconductor component can subsequently be fixed to a connectioncarrier, for example a lead frame 11 by the underside of the metalliccarrier 2 facing away from the optoelectronic semiconductor chip 1, forexample by soldering. The metallic carrier 2 then forms a firstelectrical connection location of the optoelectronic semiconductorcomponent. A second electrical connection location is formed by thebonding pad 10 a at the first main face 1 a of the optoelectronicsemiconductor chip 1, said bonding pad being connected to acorresponding bonding pad 10 b of the lead frame 11 by means of aconnection wire 9.

As illustrated schematically in FIG. 2E, heat 8 generated by theoptoelectronic semiconductor chip 1 during operation can be dissipatedthrough the metallic carrier 2 to the lead frame 11 over a particularlylarge area.

In conjunction with FIGS. 3A to 3G, a further exemplary embodiment of amethod described here for producing an optoelectronic semiconductorcomponent is explained in greater detail. A difference with respect tothe method described in conjunction with FIGS. 2A to 2E arises here inthe method step illustrated schematically in FIG. 3C. In this methodstep, electrically insulating separating structures are formed forexample by exposing and developing a photoresist 12 on that side of theseed layer 21 which faces away from the intermediate carrier 5. In thenext method step, FIG. 3D, the separating structures 12 form electricalisolators during the deposition of the carrier assemblage 20electrolytically or in an electroless fashion.

In a further method step, FIG. 3E, the electrically insulatingseparating structures 12 are detached, thus giving rise to perforations13 in the carrier assemblage 20.

FIG. 3F illustrates that the perforations 13 are subsequently filledwith the electrically insulating material 3.

Singulation gives rise to the optoelectronic semiconductor componentsillustrated in FIG. 3G, which comprise a metallic carrier 2 having twopartial regions 2 a, 2 b forming electrical connection locations ofopposite polarities of the optoelectronic semiconductor component.Singulation can be effected, for example, as also in the exemplaryembodiment in FIGS. 2A to 2E, by means of a phototechnology andsubsequent etching, for example using FeC13.

In conjunction with FIGS. 4A and 4B, a further exemplary embodiment ofan optoelectronic semiconductor component described here is explained ingreater detail, which can be produced for example by a method similar tothe method described in conjunction with FIGS. 3A to 3G. In contrast tothe method described in conjunction with FIGS. 3A to 3G, theelectrically insulating layer 4 is dispensed with by being removed againafter the conclusion of the method. Alternatively, however, the layer 4can also remain in the optoelectronic semiconductor component.

The contact-connection of the optoelectronic semiconductor chip 1 is nowillustrated in greater detail with reference to FIGS. 4A and 4B. Theoptoelectronic semiconductor chip 1 has at its underside, that is to sayat the second main face 1 b, a contact location 14 a and a contactlocation 14 b insulated therefrom. The electrically insulated contactlocation 14 b serves, for example, for the p-side connection of theoptoelectronic semiconductor chip 1, while the contact location 14 aserves for the n-side connection.

By way of example, proceeding from the p-side contact location 14 b, aperforation can be formed through the n-conducting semiconductormaterial and an active region of the optoelectronic semiconductor chip1, the perforation being coated with an electrically insulating materialand filled with an electrically conductive material which produces anelectrical contact with the p-side of the semiconductor chip 1.Alternatively, the perforation can also be connected to the n-conductingsemiconductor material, that is to say that, in contrast to theillustration shown in FIG. 4B, n-side and p-side contacts can also beinterchanged.

The electrically insulating material 3 is now arranged in a trench insuch a way that a partial region 2 b of the carrier 2 arises, which iselectrically insulated from the partial regions 2 a. In this way, twoconnection locations for making electrical contact with theoptoelectronic semiconductor component are arranged at the underside ofthe carrier facing away from the semiconductor chip 1. In this case,FIG. 4B shows a sectional illustration along the interface betweencarrier 2 and optoelectronic semiconductor chip 1.

The invention is not restricted to the exemplary embodiments by thedescription on the basis of said exemplary embodiments. Rather, theinvention encompasses any novel feature and also any combination offeatures, which in particular includes any combination of features inthe patent claims, even if this feature or this combination itself isnot explicitly specified in the patent claims or exemplary embodiments.

1. An optoelectronic semiconductor component comprising: a substratelessoptoelectronic semiconductor chip having a first main face at a top sideand a second main face at an underside; and a metallic carrier, which isarranged at the underside of the optoelectronic semiconductor chip,wherein the metallic carrier projects beyond the optoelectronicsemiconductor chip in at least one lateral direction, and wherein themetallic carrier is deposited electrolytically or in an electrolessfashion at the second main face of the optoelectronic semiconductorchip.
 2. The optoelectronic semiconductor component according to claim1, wherein a seed layer is arranged between the metallic carrier and thesecond main face of the optoelectronic semiconductor chip, said seedlayer at least in places being in direct contact with the metalliccarrier and the second main face of the optoelectronic semiconductorchip.
 3. The optoelectronic semiconductor component according to claim1, wherein the optoelectronic semiconductor chip, apart from the firstmain face, is covered completely, in particular by the seed layer, themetallic carrier and/or an electrically insulating layer.
 4. Theoptoelectronic semiconductor component according to claim 1, comprisingan electrically insulating layer, which covers the metallic carrier atits outer surface which faces the optoelectronic semiconductor chip, theouter surface being free of the optoelectronic semiconductor chip,wherein the electrically insulating layer covers a side face of theoptoelectronic semiconductor chip at least in places.
 5. Theoptoelectronic semiconductor component according to claim 4, wherein theelectrically insulating layer is designed to reflect electromagneticradiation that is to be emitted or detected by the optoelectronicsemiconductor chip during operation, wherein the electrically insulatinglayer appears white, in particular.
 6. The optoelectronic semiconductorcomponent according to claim 2, wherein the seed layer is designed toreflect electromagnetic radiation that is to be emitted or detected bythe optoelectronic semiconductor chip during operation.
 7. Theoptoelectronic semiconductor component according to claim 1, wherein themetallic carrier is electrically conductive and forms at least oneelectrical connection location of the optoelectronic semiconductorcomponent.
 8. The optoelectronic semiconductor component according toclaim 1, wherein the metallic carrier comprises partial regionselectrically insulated from one other, wherein each of the partialregions forms an electrical connection location of the optoelectronicsemiconductor component, wherein the electrical connection locations areof opposite polarity.
 9. The optoelectronic semiconductor componentaccording to claim 8, which is surface-mountable.
 10. The optoelectronicsemiconductor component according to claim 1, wherein the metalliccarrier completely projects beyond the optoelectronic semiconductor chiplaterally.
 11. The optoelectronic semiconductor component according toclaim 1, comprising a multiplicity of substrateless optoelectronicsemiconductor chips, wherein the metallic carrier completely projectsbeyond all the optoelectronic semiconductor chips in a lateraldirection.
 12. The optoelectronic semiconductor component according toclaim 1, wherein the optoelectronic semiconductor chip is aradiation-emitting semiconductor chip which emits electromagneticradiation during operation exclusively through the first main face. 13.A method for producing an optoelectronic semiconductor componentcomprising the following steps: providing a multiplicity ofsubstrateless optoelectronic semiconductor chips, wherein each of theoptoelectronic semiconductor chips has a first main face at a top sideand a second main face at an underside; arranging and fixing themultiplicity of optoelectronic semiconductor chips on an intermediatecarrier, wherein the optoelectronic semiconductor chips are arranged ina manner spaced apart from one another, such that a respectiveinterspace is formed between two mutually directly adjacentoptoelectronic semiconductor chips; filling the interspaces with anelectrically insulating layer; applying a seed layer to that side of theoptoelectronic semiconductor chips and of the electrically insulatinglayer which faces away from the intermediate carrier; and depositing ametallic carrier onto the seed layer electrolytically or in anelectroless fashion.
 14. The method according to claim 13, wherein,prior to the electrolytic or electroless deposition, electricallyinsulating separating structures are produced on the seed layer andcover the seed layer in places.
 15. (canceled)
 16. An optoelectronicsemiconductor component comprising: a substrateless optoelectronicsemiconductor chip having a first main face at a top side and a secondmain face at an underside; a metallic carrier, which is arranged at theunderside of the optoelectronic semiconductor chip; and an electricallyinsulating layer, which covers the metallic carrier at a outer surfaceof the metallic carrier which faces the optoelectronic semiconductorchip and which is free from the optoelectronic semiconductor chip,wherein the metallic carrier projects beyond the optoelectronicsemiconductor chip in at least one lateral direction, wherein themetallic carrier is deposited electrolytically or in an electrolessfashion at the second main face of the optoelectronic semiconductorchip, and wherein the electrically insulating layer reflectselectromagnetic radiation that is to be emitted or detected by theoptoelectronic semiconductor chip during operation, wherein theelectrically insulating layer appears white.
 17. The optoelectronicsemiconductor component according to claim 16, wherein the electricallyinsulating layer comprises particles of a filler and wherein the filleris given by one of the following materials: metal oxide, metal fluoride,silicon oxide.